Mendenhall GN, Shrestha M, Anthony E (1992) FM broadcast transmitters. In: 1975 IEEE-MTT-S international microwave symposium. Gysel UH (1975) A new N-way power divider/combiner suitable for high-power applications. IRE Trans Microw Theory Tech 8(1):116–118 Wilkinson EJ (1960) An N-way hybrid power divider. In: 2001 IEEE MTT-S international microwave sympsoium digest (Cat. Tahara Y, Oh-Hashi H, Ban T, Totani K, Miyazaki M (2001) A low-loss serial power combiner using novel suspended stripline couplers. IRE Trans Microw Theory Tech 9(6):573–573 Mohr R (1961) A microwave power divider (correspondence). Ikeda H, Itoh Y (2018) 2.4-GHz-band high-power and high-efficiency solid-state injection-locked oscillator. In: 2012 IEEE/MTT-S international microwave symposium digest. Shi T, Li K (2012) High power solid-state oscillator for microwave oven applications. Paul CR (2011) Inductance: loop and partial. Application note AN11130Īlim MA, Rezazadeh AA, Gaquiere C (2015) Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate. Application report CA-330-11Īmpleon (2011) Bias module for 50 V GaN demonstration boards. NXP (2019) MRF24G300H RF power GaN transistor data sheet. Raab FH (2001) Class-E, class-C, and class-F power amplifiers based upon a finite number of harmonics. Microwaves & RF 56Ĭripps SC (2006) RF power amplifiers for wireless communications. Hammes P, Monsauret N, Loysel S, Schmidt-Szalowski M, van der Zanden J (2017) A robust, large-signal model for LDMOS RF power transistors. In: 1999 IEEE MTT-S international microwave symposium digest (Cat. IEEE, pp 5A.2.1–5A.2.9Ĭurtice W, Pla J, Bridges D, Liang T, Shumate E (1999) A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs. In: 2011 international reliability physics symposium. Proc IEEE 57(9):1587–1594īurdeaux DC, Burger WR (2011) Intrinsic reliability of RF power LDMOS FETs. Application Note AN11287īlack JR (1969) Electromigration failure modes in aluminum metallization for semiconductor devices. III-Vs Rev 19(9):33–35Īmpleon (2013) Lifetime of BLF574XR in broadcast and ISM applications. Gurnett K, Adams T (2006) GaN makes inroads in the wireless infrastructure. In: Different types of field-effect transistors: theory and applications, chap. 3. IEEE, pp 1–4Īadit MNA, Kirtania SG, Afrin F, Alam MK, Khosru QDM (2017) High electron mobility transistors: performance analysis, research trend and applications. In: 2006 international electron devices meeting. Van Rijs F, Theeuwen SJCH (2018) Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit. Lim TC, Armstrong GA (2006) The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance. In: 2018 13th European microwave integrated circuits conference (EuMIC). Theeuwen SJCH, Mollee H, Heeres R, Van Rijs F (2018) LDMOS technology for power amplifiers up to 12 GHz. Runton DW, Trabert B, Shealy JB, Vetury R (2013) History of GaN: High-power RF gallium nitride (GaN) from infancy to manufacturable process and beyond. In: 1979 international electron devices meeting. Johnsen RJ, Granberg H (1979) Design, construction, and performance of high power RF VMOS devices. Wesson R (2016) RF solid state cooking white paper. In: 27th international linear accelerator conference (LINAC14), pp 751–755 McGraw-Hill Book Companyĭexter A (2014) Phase locked magnetrons for accelerators. However, power generation in the important 915 MHz, 2.45 GHz, and 5.8 GHz ISM bands has until recently been dominated by magnetrons, so those frequencies are the focus of this chapter.Ĭollins GB (1948) Microwave magnetrons, vol 6. Solid-state RF power has been used for decades in 1–500 MHz ISM applications. ISM equipment manufacturers who are looking for an overview of solid-state generator technology to decide if and how they should get involved with it. Researchers in a broad range of scientific and medical disciplines who want to learn how to use solid-state RF generation in their applications ĭesigners with ideas for products based on technology from these disciplines who want to learn about the feasibility of a solid-state generator and the tradeoffs they will need to consider Our intention is to look at this from the end-user’s viewpoint and to provide information that will be most helpful to This chapter is intended to provide an overview of the benefits that solid-state RF generators can provide to industrial, scientific, and medical (ISM) ‘RF energy’ applications, and the technologies, architectures, and design philosophies used in such generators.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |